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| FDP2570/FDB2570 August 2001 FDP2570/FDB2570 150V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 150V MOSFETs with low on-resistance and fast switching will benefit. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features * 22 A, 150 V. RDS(ON) = 80 m @ VGS = 10 V RDS(ON) = 90 m @ VGS = 6 V * Low gate charge (40nC typical) * Fast switching speed * High performance trench technology for extremely low RDS(ON) * 175C maximum junction temperature rating D D G G D S TO-220 FDP Series G S TO-263AB FDB Series S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25oC unless otherwise noted Parameter Ratings 150 20 (Note 1) (Note 1) Units V V A A W W/C C 22 50 93 0.63 -65 to +175 Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Thermal Characteristics RJC RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1.6 62.5 C/W C/W Package Marking and Ordering Information Device Marking FDB2570 FDP2570 Device FDB2570 FDP2570 Reel Size 13'' Tube Tape width 24mm n/a Quantity 800 units 45 units 2001 Fairchild Semiconductor Corporation FDP2570/FDB2570 Rev C(W) FDP2570/FDB2570 Electrical Characteristics Symbol WDSS IAR TA = 25C unless otherwise noted Parameter Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse (Note 2) Test Conditions VDD = 75 V, ID = 11 A Min Typ Max Units 375 11 mJ A Drain-Source Avalanche Ratings (Note 1) Off Characteristics BVDSS BVDSS TJ IDSS IGSSF IGSSR VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 120 V, VGS = 20 V, VGS = -20 V, VGS = 0 V VDS = 0 V VDS = 0 V 150 154 1 100 -100 V mV/C A nA nA On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS = 10 V, ID = 11 A ID = 10 A VGS = 6.0 V, VGS = 10 V, ID = 11 A, TJ = 125C VGS = 10 V, VDS = 10 V, VDS = 10 V ID = 11 A 2 2.6 -7 61 63 127 4 V mV/C 80 90 175 m ID(on) gFS 25 39 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = 75 V, f = 1.0 MHz V GS = 0 V, 1911 106 33 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 75 V, VGS = 10 V, ID = 1 A, RGEN = 6 12 5 33 23 22 10 53 37 56 ns ns ns ns nC nC nC VDS = 75 V, VGS = 10 V ID = 11 A, 40 7 12 Drain-Source Diode Characteristics and Maximum Ratings IS VSD Notes: 1. Calculated continuous current based on maximum allowable junction temperature. 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 11 A Voltage 22 (Note 2) A V 0.83 1.3 FDP2570/FDB2570 Rev C(W) FDP2570/FDB2570 Typical Characteristics 50 5.0V 4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V ID, DRAIN CURRENT (A) 40 1.6 1.4 VGS = 4.0V 4.5V 5.0V 10V 1 30 1.2 20 4.0V 10 0 0 3 6 9 12 15 VDS, DRAIN-SOURCE VOLTAGE (V) 0.8 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.35 RDS(ON), ON-RESISTANCE (OHM) 2.9 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.5 2.1 1.7 1.3 0.9 0.5 0.1 -65 -35 -5 25 55 85 115 o ID = 11 A VGS = 10V ID = 5.5 A 0.3 0.25 0.2 0.15 0.1 0.05 0 3 4 5 6 7 8 VGS, GATE TO SOURCE VOLTAGE (V) 9 10 TA = 25oC TA = 125oC 145 175 TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. 50 VDS = 50V ID, DRAIN CURRENT (A) 40 IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VGS = 0V 10 TA = 125oC 1 25oC 0.1 0.01 0.001 0.0001 -55oC 30 20 TA = 125oC 25oC -55oC 10 0 2 2.5 3 3.5 4 4.5 5 VGS, GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDP2570/FDB2570 Rev C(W) FDP2570/FDB2570 Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 11A 8 75V 6 CAPACITANCE (pF) 3000 VDS = 25V 50V 2500 CISS 2000 1500 1000 COSS 500 CRSS 0 f = 1MHz VGS = 0 V 4 2 0 0 6 12 18 24 30 36 42 Qg, GATE CHARGE (nC) 0 20 40 60 80 100 120 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) Figure 8. Capacitance Characteristics. 2000 RDS(ON) LIMIT ID, DRAIN CURRENT (A) 10us 100us 10 1ms 10ms 100ms DC 1500 SINGLE PULSE RJA = 1.6C/W TA = 25C 1000 1 VGS = 10V SINGLE PULSE RJC = 1.6oC/W TA = 25oC 500 0.1 1 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) 0 0.00001 0.0001 0.001 0.01 0.1 1 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE RJA(t) = r(t) * RJC RJC = 1.6 C/W P(pk) t1 t2 TJ - TA = P * RJC(t) Duty Cycle, D = t1 / t2 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1. Transient thermal response will change depending on the circuit board design. FDP2570/FDB2570 Rev C(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM DISCLAIMER FAST FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET VCXTM STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H3 |
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